The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Apr. 03, 2012
Bo-kyeong Kang, Seoul, KR;
Jae-seok Kim, Seoul, KR;
Ho-young Kim, Seongnam-si, KR;
Bo-un Yoon, Seoul, KR;
Il-young Yoon, Hwaseong-si, KP;
Bo-Kyeong Kang, Seoul, KR;
Jae-Seok Kim, Seoul, KR;
Ho-Young Kim, Seongnam-si, KR;
Bo-Un Yoon, Seoul, KR;
Il-Young Yoon, Hwaseong-si, KP;
Abstract
In a method for fabricating a semiconductor device, a substrate may be provided that includes: a base, an active fin that projects from an upper surface of the base and is integrally formed with the base, and a buffer oxide film pattern formed on the active fin in contact with the active fin. A first dummy gate film may be formed on the substrate to cover the buffer oxide film pattern and the first dummy gate film may be smoothed to expose the buffer oxide film pattern. A second dummy gate film may be formed on the exposed buffer oxide film pattern and the first dummy gate film.