The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Sep. 20, 2011
Applicants:
Philip Rutter, Stockport, GB;
Christopher Martin Rogers, Manchester, GB;
Inventors:
Philip Rutter, Stockport, GB;
Christopher Martin Rogers, Manchester, GB;
Assignee:
NXP, B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device is presented. The device has: a gate terminal formed from polysilicon and covered by an insulation layer; and a plug extending through an insulation layer to provide an electrical connection to the gate trench. A metal layer is deposited to cover at least a portion of the insulation layer. The metal layer is then etched to remove the metal layer from above the plug.
Rutter, Philip. (2014). Semiconductor device with gate trench (U.S. Patent No. 8652904). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8652904
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile