The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Dec. 27, 2011
Youngkuk Kim, Seoul, KR;
Insang Jeon, Seoul, KR;
Youngseok Kim, Seoul, KR;
Young-lim Park, Hwaseong-si, KR;
Ho-kyun an, Seoul, KR;
Youngkuk Kim, Seoul, KR;
Insang Jeon, Seoul, KR;
Youngseok Kim, Seoul, KR;
Young-Lim Park, Hwaseong-si, KR;
Ho-Kyun An, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are semiconductor memory devices and the methods of fabricating the same. The method may include forming a plurality of diode patterns in each of a plurality of first trenches, each of the plurality of first trenches including at least two active regions, the plurality of diode patterns occupying a plurality of spaces, treating the plurality of diode patterns to form a plurality of semiconductor patterns in each of the plurality of spaces, removing portions of the plurality of semiconductor patterns to form a recess in each of the plurality of spaces, treating the of the plurality of semiconductor patterns to form a plurality of diodes in each of the plurality of spaces, forming a bottom electrode on each of the plurality of diodes, forming a plurality of memory elements on each of the bottom electrodes, and forming a plurality of upper interconnection lines on the plurality of memory elements.