The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2014

Filed:

Aug. 26, 2009
Applicants:

Stefano Benagli, Neuch{hacek over (a)}tel, CH;

Daniel Borrello, Cortaillod, CH;

Evelyne Vallat-sauvain, Chezard-St. Martin, CH;

Johannes Meier, Corcelles, CH;

Ulrich Kroll, Corcelles, CH;

Inventors:

Stefano Benagli, Neuch{hacek over (a)}tel, CH;

Daniel Borrello, Cortaillod, CH;

Evelyne Vallat-Sauvain, Chezard-St. Martin, CH;

Johannes Meier, Corcelles, CH;

Ulrich Kroll, Corcelles, CH;

Assignee:

Tel Solar AG, Trubbach, CH;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/20 (2006.01); H01L 31/075 (2012.01);
U.S. Cl.
CPC ...
Abstract

A thin film photovoltaic device on a substrate is being realized by a method for manufacturing a p-i-n junction semiconductor layer stack with a p-type microcrystalline silicon layer, a p-type amorphous silicon layer, a buffer silicon layer comprising preferably intrinsic amorphous silicon, an intrinsic type amorphous silicon layer, and an n-type silicon layer over the intrinsic type amorphous silicon layer.


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