The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Oct. 29, 2009
Susumu Adachi, Hirakata, JP;
Susumu Adachi, Hirakata, JP;
Shimadzu Corporation, Kyoto, JP;
Abstract
According to the method of manufacturing an optical matrix device of this invention, semiconductor films and gate insulating films which influence the characteristics of thin-film transistors most are formed in a vacuum (S, S), whereby the interfaces between the semiconductor films and gate insulating films are not contaminated. The semiconductor films and gate insulating films are formed in a vacuum, but wires need not be formed in a vacuum (S). Thus, the semiconductor films and gate insulating films formed in a vacuum are transferred onto the wires formed beforehand (S). Even if a substrate has a large area, the wires, semiconductor films and gate insulating films of the thin-film transistors can be formed efficiently.