The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2014

Filed:

Jun. 04, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventor:

Mitsuaki Honma, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array, a bit line, and a voltage generator. The memory cell array includes each of a plurality of memory cells. Each of the memory cells includes a charge storage layer and a control gate and is capable of holding two or more levels of data. The bit line is capable of transferring data to the memory cells in a one-to-one correspondence. The voltage generator carries out a verify operation by applying a verify voltage to the memory cells after performing first writing by applying a first voltage and then a second voltage lower than the first voltage to the control gate.


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