The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Mar. 30, 2009
Ludovic R. A. Goux, Hannut, BE;
Thomas Gille, Heverlee, BE;
Judit G. Lisoni, Oud-Heverlee, BE;
Dirk J. C. C. M. Wouters, Heverlee, BE;
Ludovic R. A. Goux, Hannut, BE;
Thomas Gille, Heverlee, BE;
Judit G. Lisoni, Oud-Heverlee, BE;
Dirk J. C. C. M. Wouters, Heverlee, BE;
NXP B.V., Eindhoven, NL;
Abstract
A phase change memory cell has more than one memory region each being a narrowed region of phase change memory material extending between first and second electrodes. Each of the plurality of memory regions can be programmed to be in a low resistance state or a high resistance state by applying suitable programming conditions of current and/or voltage. The resistances of the high resistance states and the programming conditions to convert the high resistance states to the low resistance state are different in each of the plurality of memory regions.