The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2014

Filed:

Nov. 14, 2011
Applicant:

Naofumi Suzuki, Tokyo, JP;

Inventor:

Naofumi Suzuki, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor light emitting device includes a laminate section in which p-type layerand n-type layerare laminated such that they sandwich active layerA part of light emitted from active layer 6 exits from a first surface of the laminate section. The semiconductor light emitting device includes a reflection layer that is located on a second surface opposite to the first surface of the laminate section and that reflects light that is emitted from active layerand that enters from the second surface in the direction of the active layer side. The reflection layer includes metal layerand transparent electrode filmstothat are transparent to a wave length of light that enters from active layerand that have conductivity. The refractive index of transparent conduction filmis lower than that of each of transparent conduction filmsandand p-type layerThe absorption coefficient of transparent conduction filmis smaller than that of each of transparent conduction filmsand


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