The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Feb. 04, 2013
Panasonic Corporation, Osaka, JP;
Yusuke Nozaki, Osaka, JP;
Hiroyuki Kohama, Nara, JP;
Masaru Fukusen, Shiga, JP;
Naoki Okamoto, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The low-noise amplifier with through mode is configured such that a source grounded transistor and a gate grounded transistor are connected in cascode, and a load impedance element and a switching transistor are serially connected between the drain of the gate grounded transistor and a power supply, and a through pass circuit is connected between an input terminal and an output terminal. The gate voltage of the gate grounded transistor is regulated by a bias circuit and the voltage of a mode control terminal is converted by a level shifter to control the gate voltage of the switching transistor, whereby, in the case of using only transistors whose terminal-to-terminal breakdown voltages are each equal to or less than the power supply voltage, it becomes feasible to prevent voltages equal to or more than the terminal-to-terminal breakdown voltages from being applied between the terminals of each transistor.