The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Oct. 16, 2009
Matthew J. Carey, San Jose, CA (US);
Shekar B. Chandrashekariaih, San Jose, CA (US);
Jeffrey R. Childress, San Jose, CA (US);
Stefan Maat, San Jose, CA (US);
Matthew J. Carey, San Jose, CA (US);
Shekar B. Chandrashekariaih, San Jose, CA (US);
Jeffrey R. Childress, San Jose, CA (US);
Stefan Maat, San Jose, CA (US);
HGST Netherlands B.V., Amsterdam, NL;
Abstract
A magnetoresistive sensor that has a free layer with a face centered cubic, 100 crystal orientation formed on an underlayer structure that has been deposited in the presence of nitrogen. The free layer can be constructed of CoFe, Co(MnFe)X (where 0≦y≦1 and X is Si, Ge, Sn, Al, Ga, or a combination thereof), CoFeX (where X is Si, Ge, Sn, Al, Ga, or a combination thereof). The under-layer can include a layer of Ta, a Cu layer formed over the layer of Ta and deposited using a process gas comprising about 20 percent nitrogen and a layer of Ag deposited over the layer of Cu and deposited using a process gas comprising about 50 to 100 percent nitrogen.