The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2014

Filed:

Jun. 06, 2012
Applicant:

Isao Makabe, Yokohama, JP;

Inventor:

Isao Makabe, Yokohama, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nitride semiconductor device is disclosed. The device includes a stack of semiconductor layers including the channel layer, the spacer layer, and the doped layer. The spacer layer is made of AlN while the doped layer is InAlN. A feature of the embodiment is that the spacer layer has a thickness of 0.5 to 1.25 nm.


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