The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Dec. 27, 2006
Sang-woo Whangbo, Seoul, KR;
Shi-yul Kim, Yongin-si, KR;
Sung-hoon Yang, Seoul, KR;
Woo-geun Lee, Yongin-si, KR;
Sang-Woo Whangbo, Seoul, KR;
Shi-Yul Kim, Yongin-si, KR;
Sung-Hoon Yang, Seoul, KR;
Woo-Geun Lee, Yongin-si, KR;
Samsung Display Co., Ltd., , KR;
Abstract
A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.