The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2014

Filed:

Jul. 14, 2011
Applicants:

Deniz Sabuncuoglu Tezcan, Neerwinden, BE;

Yann Civale, Leuven, BE;

Eric Beyne, Leuven, BE;

Inventors:

Deniz Sabuncuoglu Tezcan, Neerwinden, BE;

Yann Civale, Leuven, BE;

Eric Beyne, Leuven, BE;

Assignee:

IMEC VZW, , BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/4763 (2006.01); H01L 21/44 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 29/06 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

Ultra-low capacitance interconnect structures, preferably Through Silicon Via (TSV) interconnects and methods for fabricating said interconnects are disclosed. The fabrication method comprises the steps of providing a substrate having a first main surface, producing at least one hollow trench-like structure therein from the first main surface, said trench-like structure surrounding an inner pillar structure of substrate material, depositing a dielectric liner which pinches off said hollow trench-like structure at the first main surface such that an airgap is created in the center of hollow trench-like structure and further creating a TSV hole and filling it at least partly with conductive material.


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