The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Jul. 27, 2011
Yan-kai Chiou, Jhunan Township, Miaoli County, TW;
Ming-chin Kuo, Jhunan Township, Miaoli County, TW;
Ching-tang Tsai, Jhunan Township, Miaoli County, TW;
Tien-szu Chen, Jhunan Township, Miaoli County, TW;
Kuei-wu Huang, Jhunan Township, Miaoli County, TW;
Yan-Kai Chiou, Jhunan Township, Miaoli County, TW;
Ming-Chin Kuo, Jhunan Township, Miaoli County, TW;
Ching-Tang Tsai, Jhunan Township, Miaoli County, TW;
Tien-Szu Chen, Jhunan Township, Miaoli County, TW;
Kuei-Wu Huang, Jhunan Township, Miaoli County, TW;
Gintech Energy Corporation, Miaoli County, TW;
Abstract
A method of manufacturing a solar cell includes the following steps. An ion implantation process is performed to a first surface of a substrate to form a first doping layer. Then, the ion implantation process is performed to a second surface of the substrate to form a second doping layer. After that, an annealing process is performed to the structure formed by the substrate, the first doping layer and the second doping layer, and forming a first passivation layer on the first doping layer and a second passivation layer on the second doping layer by the annealing process. A third passivation layer is formed on the first passivation layer formed after the annealing process and a fourth passivation layer is formed on the second passivation layer formed after the annealing process. Afterward, conductive electrodes are formed on the third passivation layer and the fourth passivation layer, respectively.