The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Oct. 18, 2012
Panasonic Corporation, Osaka, JP;
Naomi Anzue, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A method includes the step of preparing a GaN-based substrate, the step of forming on the substrate a nitride-based semiconductor multilayer structure including a p-type AlGaN layer (p-type semiconductor region), the p-type AlGaN layerbeing made of an AlInGaN semiconductor (x+y+z=1, x≧0, y≧0, z≧0), and a principal surface of the p-type AlGaN layerbeing an m-plane, the step of forming a metal layerwhich contains at least one of Mg and Zn on the principal surface of the p-type AlGaN layerand performing a heat treatment, the step of removing the metal layer, and the step of forming a p-type electrode on the principal surface of the p-type AlGaN layer, wherein the heat treatment causes a N concentration to be higher than a Ga concentration in the p-type AlGaN layer