The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Feb. 23, 2011
Masahiro Araki, Osaka, JP;
Takaaki Utsumi, Osaka, JP;
Masahiko Sakata, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka-shi, JP;
Abstract
Provided is a method for manufacturing a nitride semiconductor device, including the steps of: forming an AlNO buffer layer containing at least aluminum, nitrogen, and oxygen on a substrate; and forming a nitride semiconductor layer on the AlNO buffer layer, wherein, in the step of forming the AlNO buffer layer, the AlNO buffer layer is formed by a reactive sputtering method using aluminum as a target in an atmosphere to and from which nitrogen gas and oxygen gas are continuously introduced and exhausted, and the atmosphere is an atmosphere in which a ratio of a flow rate of the oxygen gas to a sum of a flow rate of the nitrogen gas and the flow rate of the oxygen gas is not more than 0.5%.