The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Oct. 20, 2010
Delmar L. Barker, Tucson, AZ (US);
William R. Owens, Tucson, AZ (US);
John Warren Beck, Tucson, AZ (US);
Delmar L. Barker, Tucson, AZ (US);
William R. Owens, Tucson, AZ (US);
John Warren Beck, Tucson, AZ (US);
Raytheon Company, Waltham, MA (US);
The Arizona Board of Regents, Tucson, AZ (US);
Abstract
Isotopically-enriched graphene and isotope junctions are epitaxially grown on a catalyst substrate using a focused carbon ion beam technique. The focused carbon ion beam is filtered to pass substantially a single ion species including a single desired carbon isotope. The ion beam and filtering together provide a means to selectively isotopically-enrich the epitaxially-grown graphene from given carbon precursor and to selectively deposit graphene enriched with different carbon isotopes in different regions.