The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2014

Filed:

May. 01, 2012
Applicants:

Marcio C. DE Andrade, San Diego, CA (US);

Anna M. Leese DE Escobar, San Diego, CA (US);

Inventors:

Marcio C. De Andrade, San Diego, CA (US);

Anna M. Leese De Escobar, San Diego, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A device includes a circuitry layer having one or more circuitry regions and a superconducting layer having a plurality of naturally-occurring defects. Potential wells are formed in the superconducting layer and located outside of the bounds of the circuitry regions. A pattern of engineered defects is formed in the superconducting layer and are configured such that, upon encountering a pulse of electromagnetic energy applied at a high potential region of the superconducting layer prior to energizing any circuits within the circuitry layer and when the superconducting layer is in a superconducting state, magnetic flux trapped within the naturally-occurring defects is directed to one or more of the potential wells.


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