The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2014

Filed:

Jan. 30, 2012
Applicants:

In-woo Jun, Hwaseong-si, KR;

Won-chang Jung, Anyang-si, KR;

Inventors:

In-Woo Jun, Hwaseong-si, KR;

Won-Chang Jung, Anyang-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A local sense amplifier circuit in a semiconductor memory device, the local sense amplifier circuit including a local data sensing unit configured to amplify a voltage difference between a local input/output (I/O) line pair based on a local sensing enable signal to provide the amplified voltage difference to a global I/O line pair, the local I/O line pair including a first local I/O line and a second local I/O line, and a local I/O line control unit including a first capacitor and a second capacitor, the first capacitor increasing a voltage level of the first local I/O line based on the local sensing enable signal, the second capacitor increasing a voltage level of the second local I/O line based on the local sensing enable signal.


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