The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2014

Filed:

Sep. 14, 2009
Applicants:

Youngnam Hwang, Hwaseong-si, KR;

Changyong Um, Seoul, KR;

Inventors:

Youngnam Hwang, Hwaseong-si, KR;

Changyong Um, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A variable resistance memory device includes; a memory cell array comprising a plurality of memory cells, a pulse shifter shifting a plurality of program pulses to generate a plurality of shifted program pulses, a write and verification driver receiving the plurality of shifted program pulses to provide a program current that varies with the plurality of shifted program pulses to the plurality of memory cells, and control logic providing the plurality of program pulses to the pulse shifter and the write and verification driver during a program/verification operation, such at least two write data bits are programmed to the memory cell array in parallel during the program/verification operation.


Find Patent Forward Citations

Loading…