Esd power clamp using a low-voltage transistor to clamp a high-voltage supply in a mixed-voltage chip

Abstract

An electro-static-discharge (ESD) protection circuit is a power clamp between a high-voltage power supply VDDH and a ground. The power clamp protects high-voltage transistors in a first core and low-voltage transistors in a second core using a low-voltage clamp transistor. The low-voltage transistors have lower power-supply and snap-back voltages than the high-voltage transistors. Trigger circuits are triggered when an ESD pulse is detected on VDDH. One trigger circuit enables a gate of the low-voltage clamp transistor. A series of diodes connected between VDDH and a drain of the clamp transistor prevents latch up or snap-back during normal operation. During an ESD pulse, the series of diodes is briefly bypassed by a p-channel bypass transistor when a second trigger circuit activates an initial trigger transistor which pulses the gate of the p-channel bypass transistor low for a period of time set by an R-C network in the second trigger circuit.