The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Jun. 21, 2007
Applicants:
Tadahiro Ohmi, Miyagi, JP;
Akinobu Teramoto, Miyagi, JP;
Cheng Weitao, Miyagi, JP;
Inventors:
Assignees:
National University Corporation Tohoku University, Miyagi, JP;
Foundation for Advancement of International Science, Ibaraki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A transistor capable of adjusting a threshold value is obtained by adjusting an impurity concentration of a silicon substrate supporting an SOI layer and by controlling a thickness of a buried insulating layer formed on a surface of the silicon substrate in contact with the SOI layer.