The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2014

Filed:

Sep. 10, 2011
Applicants:

Takayuki Hashimoto, Tokai, JP;

Masahiro Masunaga, Hitachi, JP;

Inventors:

Takayuki Hashimoto, Tokai, JP;

Masahiro Masunaga, Hitachi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A control device of a semiconductor device is provided. The control device of a semiconductor device is capable of reducing both ON resistance and feedback capacitance in a hollow-gate type planar MOSFET to which a second gate electrode is provided or a trench MOSFET to which a second gate electrode is provided. In the control device controlling driving of a hollow-gate type planar MOSFET to which a second gate electrode is provided or a trench MOSFET to which a second gate electrode is provided, a signal of tuning ON or OFF is outputted to a gate electrode in a state of outputting a signal of turning OFF to the second gate electrode.


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