The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Jul. 20, 2012
Applicant:
Eui-seong Hwang, Gyeonggi-do, KR;
Inventor:
Eui-Seong Hwang, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 21/8238 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes trenches defined in a substrate, buried bit lines partially filling the trenches, a first source/drain layer filling remaining portions of the trenches on the buried bit lines, stack patterns having a channel layer and a second source/drain layer stacked therein and bonded to the first source/drain layer, wherein the channel layer contacts with the first source/drain layer, and word lines crossing with the buried bit lines and disposed adjacent to sidewalls of the channel layer.