The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Aug. 24, 2011
Masayuki Hashitani, Chiba, JP;
Masayuki Hashitani, Chiba, JP;
Seiko Instruments Inc., , JP;
Abstract
Provided is a semiconductor device that includes a vertical MOS transistor having a trench structure capable of enhancing a driving performance of the vertical MOS transistor. A thick oxide film is formed next to a gate electrode led out of a trench of the vertical MOS transistor having the trench structure, and is removed to form a stepped portion which has a face lower than a surrounding plane and has slopes as well. This makes it possible to form a heavily doped diffusion layer right under the gate electrode through ion implantation for forming a heavily doped source diffusion layer, thereby solving a problem of no current flow in a part of a driver element and enhancing the driving performance of the vertical MOS transistor.