The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2014

Filed:

Oct. 15, 2008
Applicants:

Byoung L. Min, Austin, TX (US);

James D. Burnett, Austin, TX (US);

Leo Mathew, Austin, TX (US);

Inventors:

Byoung L. Min, Austin, TX (US);

James D. Burnett, Austin, TX (US);

Leo Mathew, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for making a semiconductor device is provided. The method includes forming a first transistor with a vertical active region and a horizontal active region extending on both sides of the vertical active region. The method further includes forming a second transistor with a vertical active region. The method further includes forming a third transistor with a vertical active region and a horizontal active region extending on only one side of the vertical active region.


Find Patent Forward Citations

Min, Byoung. (2014). Multiple device types including an inverted-t channel transistor and method therefor (U.S. Patent No. 8643066). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8643066

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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