The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Apr. 06, 2012
Hyun Wook Shim, Gyeonggi-do, KR;
Suk Ho Yoon, Seoul, KR;
Tan Sakong, Gyeonggi-do, KR;
Je Won Kim, Seoul, KR;
Ki Sung Kim, Gyeonggi-do, KR;
Hyun Wook Shim, Gyeonggi-do, KR;
Suk Ho Yoon, Seoul, KR;
Tan Sakong, Gyeonggi-do, KR;
Je Won Kim, Seoul, KR;
Ki Sung Kim, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.