The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Jun. 05, 2012
Jong Wook Kim, Gyeonggi-do, KR;
Hyun Kyong Cho, Seoul, KR;
Gyu Chul Yi, Gyeongsangbuk-do, KR;
Sung Jin an, Gyeongsangbuk-do, KR;
Jin Kyoung Yoo, Gyeongsangbuk-do, KR;
Young Joon Hong, Gyeongsangbuk-do, KR;
Jong Wook Kim, Gyeonggi-do, KR;
Hyun Kyong Cho, Seoul, KR;
Gyu Chul Yi, Gyeongsangbuk-do, KR;
Sung Jin An, Gyeongsangbuk-do, KR;
Jin Kyoung Yoo, Gyeongsangbuk-do, KR;
Young Joon Hong, Gyeongsangbuk-do, KR;
LG Electronics Inc., Seoul, KR;
Abstract
A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.