The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Nov. 06, 2009
Hisayuki Miki, Chiba, JP;
Hisayuki Miki, Chiba, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
A Group III nitride compound semiconductor light emitting device is provided which has: an n-type semiconductor layer (); an active layer () of a multiple quantum well structure laminated on the n-type semiconductor layer (); a first p-type semiconductor layer () that is a layer of a superlattice structure in which an undoped film () that has a composition AlGaN (x indicating composition ratio, being within a range 0<x≦0.4) and that contains no dopant, and a doped film () that has a composition AlGaN (y indicating composition ratio, being within a range 0≦y<0.4) and that contains a dopant, are alternately laminated a plurality of times, and a surface thereof on the active layer side () is constituted by the undoped film (); and a second p-type semiconductor layer () laminated on the first p-type semiconductor layer ().