The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Dec. 03, 2010
Hiroki Mori, Osaka, JP;
Yasuhiro Iguchi, Osaka, JP;
Hiroshi Inada, Osaka, JP;
Youichi Nagai, Osaka, JP;
Kouhei Miura, Osaka, JP;
Hideaki Nakahata, Itami, JP;
Katsushi Akita, Itami, JP;
Takashi Ishizuka, Itami, JP;
Kei Fujii, Itami, JP;
Hiroki Mori, Osaka, JP;
Yasuhiro Iguchi, Osaka, JP;
Hiroshi Inada, Osaka, JP;
Youichi Nagai, Osaka, JP;
Kouhei Miura, Osaka, JP;
Hideaki Nakahata, Itami, JP;
Katsushi Akita, Itami, JP;
Takashi Ishizuka, Itami, JP;
Kei Fujii, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-Shi, JP;
Abstract
A light-receiving element includes an InP substrate, a light-receiving layerhaving an MQW and located on the InP substrate, a contact layerlocated on the light-receiving layer, a p-type regionextending from a surface of the contact layerto the light-receiving layer, and a p-side electrodethat forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InGaAs (0.38≦x≦0.68) layer and a GaAsSb(0.25≦y≦0.73) layer, and in the GaAsSblayer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.