The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2014

Filed:

May. 09, 2011
Applicants:

Pamela M. Visintin, North Charleston, SC (US);

Ping Jiang, Danbury, CT (US);

Michael B. Korzenski, Danbury, CT (US);

Mackenzie King, Southbury, CT (US);

Inventors:

Pamela M. Visintin, North Charleston, SC (US);

Ping Jiang, Danbury, CT (US);

Michael B. Korzenski, Danbury, CT (US);

Mackenzie King, Southbury, CT (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/42 (2006.01);
U.S. Cl.
CPC ...
Abstract

A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.


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