The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Apr. 02, 2012
Jee Hwan Kim, White Plains, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Siegfried Maurer, Stormville, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Jee Hwan Kim, White Plains, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Siegfried Maurer, Stormville, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A field effect transistor (FET) has a channel hosted in Ge. The FET has silicon-germanium (SiGe) source and drain formed by selective epitaxy. The SiGe source and drain exert a tensile stress onto the Ge channel. During forming of the SiGe source and drain, an n-type dopant species and a compensating species are being incorporated into the SiGe source and drain. The n-type dopant species and the compensating species are so selected that the size of the SiGe atomic radius is inbetween the dopant atomic radius and the compensating species atomic radius.