The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Aug. 02, 2012
Rudy Octavius Sihombing, Hsinchu, TW;
Chia-hao Lee, New Taipei, TW;
Tsung-hsiung Lee, Taoyuan County, TW;
Shang-hui Tu, Tainan, TW;
Rudy Octavius Sihombing, Hsinchu, TW;
Chia-Hao Lee, New Taipei, TW;
Tsung-Hsiung Lee, Taoyuan County, TW;
Shang-Hui Tu, Tainan, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device including a semiconductor substrate of a first conductivity type and an epitaxial layer of the first conductivity type disposed thereon is disclosed. Pluralities of first and second trenches are alternately arranged in the epitaxial layer. First and second doped regions of the first conductivity type are formed in the epitaxial layer and surrounding each first trench. A third doped region of a second conductivity type is formed in the epitaxial layer and surrounding each second trench. A first dopant in the first doped region has diffusivity larger than that of a second dopant in the second doped region. A method for fabricating a semiconductor device is also disclosed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile