The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2014

Filed:

Mar. 19, 2012
Applicant:

Keisuke Nakazawa, Yokohama, JP;

Inventor:

Keisuke Nakazawa, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, there is provided a method of manufacturing a semiconductor device. In the method, a substrate portion and a fin portion on the substrate portion are formed. A first silicon oxide film is formed on each side surface of the fin portion. A polysilazane film having an upper surface lower than the upper surface of the first silicon oxide film is formed on each side surface of the first silicon oxide film. The polysilazane film is converted into a silicon oxynitride film. The first silicon oxide film is etched to make the upper surface of the first silicon oxide film not higher than the upper surface of the silicon oxynitride film. A heavily doped semiconductor layer is formed in the fin portion.


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