The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8642379 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 04, 2014

Filed:

Apr. 03, 2008
Applicants:

Sadayoshi Hotta, Osaka, JP;

Jeremy Henley Burroughes, Cambridge, GB;

Gregory Lewis Whiting, Menlo Park, CA (US);

Inventors:

Sadayoshi Hotta, Osaka, JP;

Jeremy Henley Burroughes, Cambridge, GB;

Gregory Lewis Whiting, Menlo Park, CA (US);

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of making a top-gate organic thin film transistor, comprising forming source and drain contacts on a substrate; oxidizing portions of the source and drain contacts; depositing an organic semiconductor layer to form a bridge between the oxidized portions of the source and drain contacts; depositing a gate insulating layer over the organic semiconductor layer; and forming a gate electrode over the gate insulating layer.


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Hotta, Sadayoshi. (2014). Thin film transistor (U.S. Patent No. 8642379). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8642379

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