The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2014

Filed:

Jun. 01, 2009
Applicant:

Howard W. H. Lee, Saratoga, CA (US);

Inventor:

Howard W. H. Lee, Saratoga, CA (US);

Assignee:

Stion Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D 3/00 (2006.01); B05D 5/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region and forming a first electrode layer overlying the surface region of the transparent substrate. The first electrode layer has an electrode surface region. In a specific embodiment, the method includes masking one or more portions of the electrode surface region using a masking layer to form an exposed region and a blocked region. The method includes forming an absorber layer comprising a sulfur entity overlying the exposed region and removing the mask layer. In a specific embodiment, the method causing formation of a plurality of metal disulfide species overlying the blocked region. In a specific embodiment, the metal disulfide species has a semiconductor characteristic. The method includes subjecting the plurality of metal disulfide species to electromagnetic radiation from a laser beam to substantially remove the metal disulfide species. The method includes exposing the blocked region free and clear from the metal disulfide.


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