The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
May. 21, 2008
Applicants:
James R. Heath, South Pasadena, CA (US);
Dunwei Wang, Boston, MA (US);
Yuri Bunimovich, Williamsville, NY (US);
Akram Boukai, Mountain View, CA (US);
Inventors:
James R. Heath, South Pasadena, CA (US);
Dunwei Wang, Boston, MA (US);
Yuri Bunimovich, Williamsville, NY (US);
Akram Boukai, Mountain View, CA (US);
Assignee:
California Institute of Technology, Pasadena, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
A patterning method for the creation of two-dimensional nanowire structures. Nanowire patterning methods are used with lithographical patterning approaches to form patterns in a layer of epoxy and resist material. These patterns are then transferred to an underlying thin film to produce a two-dimensional structure with desired characteristics.