The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2014

Filed:

Jan. 07, 2010
Applicants:

Nick Holonyak, Jr., Urbana, IL (US);

Milton Feng, Champaign, IL (US);

Gabriel Walter, Champaign, IL (US);

Inventors:

Nick Holonyak, Jr., Urbana, IL (US);

Milton Feng, Champaign, IL (US);

Gabriel Walter, Champaign, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/34 (2006.01); H01L 33/04 (2010.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor light emitting device, including: a heterojunction bipolar light-emitting transistor having a base region between emitter and collector regions; emitter, base, and collector electrodes for coupling electrical signals with the emitter, base, and collector regions, respectively; and a quantum size region in the base region; the base region including a first base sub-region on the emitter side of the quantum size region, and a second base sub-region on the collector side of the quantum size region; and the first and second base sub-regions having asymmetrical band structures.


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