The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Mar. 10, 2010
Osamu Maeda, Kanagawa, JP;
Takehiro Taniguchi, Tokyo, JP;
Takahiro Arakida, Kanagawa, JP;
Sony Corporation, , JP;
Abstract
A semiconductor laser includes a columnar lamination structure including a first multi-layer reflection mirror, a first spacer layer, an AlGaInP (where 0≦x<1 and 0<y<1) based active layer, a second spacer layer, a second multi-layer reflection mirror, and a lateral mode adjusting layer on a substrate in this order from the substrate and including a current narrowing layer. The current narrowing layer includes an unoxidized region in an in-plane central region and a circular oxidized region in the circumference of the unoxidized region. The later mode adjusting layer includes a high reflection region to correspond to the unoxidized region and a circular low reflection region in the circumference of the high reflection region. On the assumption that a diameter of the unoxidized region is Dand a diameter of the high reflection region is D, the diameters Dand Dsatisfy an expression of 0.8<D/D<1.5.