The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Dec. 17, 2012
Renesas Electronics Corporation, Kawasaki, JP;
Mihoko Akiyama, Hyogo, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor storage device has tunnel magnetoresistive elements in memory cells. The array includes a memory array having a plurality of memory cells; a plurality of read-word-lines and a plurality of write-word-lines; a plurality of read-bit-lines; a plurality of first write-bit-lines and a plurality of second write-bit-lines; a first driver; a read circuit; a second driver; and a write circuit. The memory cell has a mos transistor, of which one current electrode is coupled to the read-bit-line. A tunnel magnetoresistive element is coupled between a control electrode of the mos transistor and the read-word-line. A capacitive element is coupled to the tunnel magnetoresistive element and forms an RC circuit together with the tunnel magnetoresistive element.