The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
May. 18, 2011
Shankar Sinha, Redwood City, CA (US);
Shih-lin S. Lee, San Jose, CA (US);
Peter J. Mcelheny, Morgan Hill, CA (US);
Shankar Sinha, Redwood City, CA (US);
Shih-Lin S. Lee, San Jose, CA (US);
Peter J. McElheny, Morgan Hill, CA (US);
Altera Corporation, San Jose, CA (US);
Abstract
Integrated circuits with memory elements are provided. A memory element may include a storage circuit coupled to data lines through access transistors. Access transistors may be used to read data from and write data into the storage circuit. An access transistor may have asymmetric source-drain resistances. The access transistor may have a first source-drain that is coupled to a data line and a second source-drain that is coupled to the storage circuit. The second source-drain may have a contact resistance that is greater than the contact resistance associated with the first source-drain. Access transistors with asymmetric source-drain resistances may have a first drive strength when passing a low signal and a second drive strength when passing a high signal to the storage circuit. The second drive strength may be less than the first drive strength. Access transistors with asymmetric drive strengths may be used to improve memory read/write performance.