The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Jun. 03, 2011
Vinay Saripalli, University Park, PA (US);
Dheeraj Mohata, University Park, PA (US);
Saurabh Mookherjea, Hillsboro, OR (US);
Suman Datta, Port Matilda, PA (US);
Vijaykrishnan Narayanan, State College, PA (US);
Vinay Saripalli, University Park, PA (US);
Dheeraj Mohata, University Park, PA (US);
Saurabh Mookherjea, Hillsboro, OR (US);
Suman Datta, Port Matilda, PA (US);
Vijaykrishnan Narayanan, State College, PA (US);
The Penn State Research Foundation, University Park, PA (US);
Abstract
A four transistor (4T) memory device is provided. The device includes a first cell transistor and a second cell transistor, the first and second cell transistors coupled to each other and defining latch circuitry having at least one multi-stable node. The device further includes a first access transistor and a second access transistor, the first and second access transistors coupling the at least one multi-stable node to at least one bit-line. In the device, each of the first and second cell transistors and each of the first and second access transistors is a unidirectional field effect transistor configured for conducting current in a first direction and to be insubstantially incapable of conducting current in a second direction.