The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Jul. 18, 2012
Hyun-jong Kim, Yongin-si, KR;
Czang-ho Lee, Yongin-si, KR;
Min Park, Yongin-si, KR;
Kyoung-jin Seo, Yongin-si, KR;
Sang-won Lee, Yongin-si, KR;
Jun-ki Hong, Yongin-si, KR;
Byoung-gook Jeong, Yongin-si, KR;
Hyun-Jong Kim, Yongin-si, KR;
Czang-Ho Lee, Yongin-si, KR;
Min Park, Yongin-si, KR;
Kyoung-Jin Seo, Yongin-si, KR;
Sang-Won Lee, Yongin-si, KR;
Jun-Ki Hong, Yongin-si, KR;
Byoung-Gook Jeong, Yongin-si, KR;
Samsung SDI Co., Ltd., Yongin-si, KR;
Abstract
A photovoltaic device including a semiconductor substrate having a first surface and a second surface, the second surface being opposite to the first surface; a first passivation layer on the first surface; and a second passivation layer on the second surface, wherein each of the first passivation layer and the second passivation layer comprises an aluminum-based compound, is disclosed. A method of preparing a photovoltaic device, the method including: forming a semiconductor substrate to have a first surface and a second surface, the second surface being opposite to the first surface; forming an emitter region and a back surface field (BSF) region at the second surface; and forming a first passivation layer on the first surface and a second passivation layer on the second surface, wherein the first passivation layer and the second passivation layer are formed concurrently, is also disclosed.