The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2014

Filed:

May. 06, 2013
Applicant:

Washington University, St. Louis, MO (US);

Inventors:

Stuart A. Solin, St. Louis, MO (US);

Kirk D. Wallace, St. Louis, MO (US);

Samuel A. Wickline, St. Louis, MO (US);

Michael S. Hughes, Wildwood, MO (US);

Assignee:

Washington University, St. Louis, MO (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 21/00 (2006.01); H01L 27/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein is an apparatus comprising a metal shunt and a planar semiconductor material in electrical contact with the metal shunt, the metal shunt located on a surface of the semiconductor material, thereby defining a semiconductor/metal interface for passing a flow of current between the semiconductor material and the metal shunt in response to an application of an electrical bias to the apparatus, wherein a portion of that semiconductor material surface is not covered by the metal shunt, wherein the semiconductor material and the metal shunt lie in different planes that are substantially parallel planes, the semiconductor/metal interface thereby being parallel to the plane of semiconductor material, and wherein, when under the electrical bias, the semiconductor/metal interface is configured to exhibit a change in resistance thereof in response to a perturbation. Such an apparatus can be used as a sensor and deployed as an array of sensors.


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