The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Aug. 12, 2011
Ju-yul Lee, Seoul, KR;
Han-mei Choi, Seoul, KR;
Dong-chul Yoo, Seongnam-si, KR;
Young-jong Je, Seoul, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Ju-Yul Lee, Seoul, KR;
Han-Mei Choi, Seoul, KR;
Dong-Chul Yoo, Seongnam-si, KR;
Young-Jong Je, Seoul, KR;
Ki-Hyun Hwang, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
An insulating pattern is disposed on a surface of a semiconductor substrate and includes a silicon oxynitride film. A conductive pattern is disposed on the insulating pattern. A data storage pattern and a vertical channel pattern are disposed within a channel hole formed to vertically penetrate the insulating pattern and the conductive pattern. The data storage pattern and the vertical channel pattern are conformally stacked along sidewalls of the insulating pattern and the conductive pattern. A concave portion is formed in the semiconductor substrate adjacent to the insulating pattern. The concave portion is recessed relative to a bottom surface of the insulating pattern.