The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Nov. 05, 2010
Junemo Koo, Suwon-si, KR;
Ihara Hisanori, Seongnam-si, KR;
Yoondong Park, Yongin-si, KR;
Hoonsang OH, Seongnam-si, KR;
Sangjun Choi, Yongin-si, KR;
Hyungjin Bae, Suwon-si, KR;
Tae Eung Yoon, Seoul, KR;
Sungkwon Hong, Los Angeles, CA (US);
Junemo Koo, Suwon-si, KR;
Ihara Hisanori, Seongnam-si, KR;
Yoondong Park, Yongin-si, KR;
HoonSang Oh, Seongnam-si, KR;
Sangjun Choi, Yongin-si, KR;
HyungJin Bae, Suwon-si, KR;
Tae Eung Yoon, Seoul, KR;
Sungkwon Hong, Los Angeles, CA (US);
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
An image sensor includes an active region including a photoelectric conversion region and a floating diffusion region, which are separated from each other, defined by a device isolation region on a semiconductor substrate, and a transfer transistor including a first sub-gate provided on an upper surface of the semiconductor substrate and a second sub-gate extending within a recessed portion of the semiconductor substrate on the active region between the photoelectric conversion region and the floating diffusion region, wherein the photoelectric conversion region includes a plurality of photoelectric conversion elements, which vertically overlap each other within the semiconductor substrate and are spaced apart from the recessed portion.