The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Oct. 19, 2010
Ki Yeol Park, Suwon, KR;
Woo Chul Jeon, Suwon, KR;
Young Hwan Park, Seoul, KR;
Jung Hee Lee, Daegu, KR;
Ki Yeol Park, Suwon, KR;
Woo Chul Jeon, Suwon, KR;
Young Hwan Park, Seoul, KR;
Jung Hee Lee, Daegu, KR;
Samsung Electro-Mechanics Co., Ltd., Suwon, Gyunggi-do, KR;
Abstract
There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer.