The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Jun. 24, 2010
Kazuo Mukaibatake, Kyoto, JP;
Daisuke Okumura, Kyoto, JP;
Kazuo Mukaibatake, Kyoto, JP;
Daisuke Okumura, Kyoto, JP;
Shimadzu Corporation, Kyoto-Shi, JP;
Abstract
In a first-stage intermediate vacuum chamber, cluster ions causing a background noise are dominantly formed in area (A), while fragment ions are dominantly generated in area (B). Taking this fact into account, in an in-source CID analysis mode, a DC voltage higher than that applied to a skimmer is applied to a first ion guide so as to create an accelerating electric field in area (B), whereby the ions are sufficiently energized to promote the fragmentation. When the in-source CID is not performed, a DC voltage higher than that applied to the first ion guide is applied to the exit end of a desolvation tube so as to create an accelerating electric field only in area (A) without creating such a field in area (B), whereby both the formation of the cluster ions and the generation of the fragment ions are suppressed, so that a high-quality chromatogram can be obtained.