The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Sep. 07, 2012
Atsuko Sakata, Kanagawa-ken, JP;
Kazuyuki Higashi, Kanagawa-ken, JP;
Akiko Nomachi, Kanagawa-ken, JP;
Takeshi Ishizaki, Kanagawa-ken, JP;
Atsuko Sakata, Kanagawa-ken, JP;
Kazuyuki Higashi, Kanagawa-ken, JP;
Akiko Nomachi, Kanagawa-ken, JP;
Takeshi Ishizaki, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a method of manufacturing a semiconductor device including forming a metal film on aback surface of a glass substrate which supports a semiconductor substrate on a front surface thereof; forming a metal oxide film by oxidizing the whole or at least a portion of the metal film from the front surface; forming protective film, such as silicon nitride, on the metal oxide film; holding the front surface of the protective film with an electrostatic chuck; and forming a via for electrical connection in the semiconductor substrate while the front surface of the protective film is in contact with by the electrostatic chuck; then using a laser to delaminate the glass substrate from the semiconductor substrate.