The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Jun. 29, 2011
Yanxiang Liu, Wappingers Falls, NY (US);
Xiaodong Yang, Hopewell Junction, NY (US);
Jinping Liu, Hopewell Junction, NY (US);
Yanxiang Liu, Wappingers Falls, NY (US);
Xiaodong Yang, Hopewell Junction, NY (US);
Jinping Liu, Hopewell Junction, NY (US);
Globalfoundries, Inc., Grand Cayman, KY;
Abstract
Methods are provided for fabricating a FINFET integrated circuit that includes epitaxially growing a first silicon germanium layer and a second silicon layer overlying a silicon substrate. The second silicon layer is etched to form a silicon fin using the first silicon germanium layer as an etch stop. The first silicon germanium layer underlying the fin is removed to form a void underlying the fin and the void is filled with an insulating material. A gate structure is then formed overlying the fin.